دیتاشیت BSS123LT1G
مشخصات دیتاشیت
| نام دیتاشیت |
BSS123L
|
| حجم فایل |
435.822
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi BSS123LT1G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
225mW
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Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
20pF@25V
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Continuous Drain Current (Id):
170mA
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Gate Threshold Voltage (Vgs(th)@Id):
2.8V@1mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
6Ω@10V,100mA
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Package:
SOT-23(TO-236)
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
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Current - Continuous Drain (Id) @ 25°C:
170mA (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
6Ohm @ 170mA, 10V
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Vgs(th) (Max) @ Id:
2V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
21.5pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
360mW (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SOT-23-3
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Base Part Number:
BSS123
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detail:
N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3
